Comprehensive study of internal quantum efficiency of high-brightness GaN-based light-emitting diodes by temperature-dependent electroluminescence method

被引：8
作者：
Wang, Yaqi [1 ]
Pan, Mengshu [1 ]
Li, Ting [1 ]
机构：
[1] Lightera Corp, Sunnyvale, CA 94086 USA
来源：
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVIII | 2014年 / 9003卷
关键词：
GaN; Light emitting diode; internal quantum efficiency;
D O I：
10.1117/12.2040710
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the development of a temperature-dependent electroluminescence experimental setup for characterizing the internal quantum efficiency (IQE) of high-brightness GaN-based light-emitting diodes (LEDs). A systematic IQE study of commercial LED chips from major LED manufacturers (including Cree, Nichia, Osram, and Sanan) is presented. The chips show distinctive temperature-and current-dependence in the IQE behavior. Analysis to correlate the onset of droop with the onset of high injection is also presented.
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页数：8
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