Admittance measurements on CIGS solar cells

被引：0
|
作者：
Kubiaczyk, A [1 ]
Nawrocka, M [1 ]
Igalson, M [1 ]
机构：
[1] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland
来源：
OPTO-ELECTRONICS REVIEW | 2000年 / 8卷 / 04期
关键词：
admittance; heterojunction; solar cells; ternary compounds;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin film solar cells based on polycrystalline CIGS absorbers ale one of the most promising candidates for the low-cost and efficient large-scale solar energy conversion devices. Electronic transport properties of ZnO/CdS/Cu(ln,Ga)Se-2 solar cells were investigated by means of admittance measurements in a frequency range from 600 Hz to I MHz and a temperature range from 80 to 300 K. Dependent on rite sample under investigation, one characteristic frequency (infection point) cor-responding to an activation energy between 80 and 160 meV ol two points corresponding to an activation energy about 400 meV have been observed. Analysis of the measured frequencies and obtained activation energies provides information on the equilibrium Fermi Eel el position at the CdS/CIGS interface.
引用
收藏
页码：378 / 381
页数：4
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