Vacuum-Ultraviolet Reflectometry of Ultra-thin HfO2 Films

被引：0
|
作者：
Hurst, Jeffrey [1 ]
Vartanian, Victor [2 ]
机构：
[1] Metrosol Inc, 2101 Donley Dr,Suite 101, Austin, TX 78758 USA
[2] Int SEMATECH Mfg Initiat, Albany, NY 12203 USA
来源：
FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009 | 2009年 / 1173卷
关键词：
Metrology; Reflectometer; Vacuum ultraviolet; SILICATE;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Blanket HfO2 layers, deposited with 2 to 40 ALD cycles, were measured using VUV-SR. The measured HfO2 thickness was compared to both XRR and process conditions. A linear correlation coefficient, R-2, of 0.9977 to the number of ALD HfO2 cycles demonstrated sensitivity for the thickness range studied, 1.5 to 37 angstrom, while the mean repeatability for thickness measurements (1-sigma) was 0.05 angstrom.
引用
收藏
页码：72 / +
页数：2
相关论文
共 50 条
  • [21] Detection and characterization of ultra-thin films with neutron reflectometry
    Tun, Z.
    ACTA CRYSTALLOGRAPHICA SECTION A, 2009, 65 : 1 - 4
  • [22] The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics
    Liu, C. H.
    Juan, P. C.
    Lin, J. Y.
    THIN SOLID FILMS, 2010, 518 (24) : 7455 - 7459
  • [23] Atomic layer deposited HfO2 ultra-thin films on different crystallographic orientation Ge for CMOS applications
    Agrawal, Khushabu S.
    Patil, Vilas S.
    Mahajan, Ashok M.
    THIN SOLID FILMS, 2018, 654 : 30 - 37
  • [24] Highly sensitive and selective detection of dopamine using atomic layer deposited HfO2 ultra-thin films
    Abraham, Daniel Arulraj
    Li, Ai-Dong
    Sanmugam, Anandhavelu
    Wadaan, Mohammad Ahmad
    Baabbad, Almohannad
    Kanagaraj, Kuppusamy
    Karuppasamy, K.
    Maiyalagan, T.
    Kim, Hyun-Seok
    Vikraman, Dhanasekaran
    ELECTROCHIMICA ACTA, 2024, 497
  • [25] The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application
    Seo, Minha
    Rha, Sang Ho
    Kim, Seong Keun
    Han, Jeong Hwan
    Lee, Woongkyu
    Han, Sora
    Hwang, Cheol Seong
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (02)
  • [26] Surface and interfacial properties of the ultra-thin HfO2 gate dielectric deposited by ALD
    Liu Hong-xia
    Tao, Zhou
    Zhao, Aaron
    Tallavarjula, Sai
    2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 803 - +
  • [27] Improved NBTI in SiN-capped PMOSFETs with ultra-thin HfO2 buffer
    Lu, Ching-Sen
    Lin, Horng-Chih
    Chen, Ying-Hung
    Huang, Tiao-Yuan
    2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2007, : 54 - +
  • [28] Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics
    Han, DD
    Kang, JF
    Lin, CH
    Han, RQ
    CHINESE PHYSICS, 2003, 12 (03): : 325 - 327
  • [29] Vacuum-ultraviolet photopolymerisation of amine-rich thin films
    Truica-Marasescu, Florina
    Wertheimer, Michael R.
    MACROMOLECULAR CHEMISTRY AND PHYSICS, 2008, 209 (10) : 1043 - 1049
  • [30] Effects of post metallization annealing on the electrical reliability of ultra-thin HfO2 films with MoN and WN gate electrodes
    Chatterjee, S
    Kuo, Y
    Lu, J
    Tewg, JY
    Majhi, P
    2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, : 626 - 627
12345