Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy -: The influence of Si- and Mg-doping

被引：146

作者：

Furtmayr, Florian ^{[1
]}

Vielemeyer, Martin ^{[1
]}

Stutzmann, Martin ^{[1
]}

Arbiol, Jordi ^{[2
,3
]}

Estrade, Sonia ^{[2
]}

Peiro, Francesca ^{[2
]}

Morante, Joan Ramon ^{[2
]}

Eickhoff, Martin ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Univ Barcelona, Dept Elect, EME, CeRMAE,IN2UB, E-08080 Barcelona, CAT, Spain

[3] Univ Barcelona, Serv Cientificotecn, TEM MAT, E-08080 Barcelona, CAT, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 03期

关键词：

Wetting - Amorphous silicon - Nitrogen plasma - Molecular beam epitaxy - III-V semiconductors - Magnesium compounds - Nanorods - Silicon nitride - Magnesium - Substrates - Gallium nitride - Molecular beams;

D O I：

10.1063/1.2953087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The self-assembled growth of GaN nanorods on Si (111) substrates by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous silicon nitride layer is formed in the initial stage of growth that prevents the formation of a GaN wetting layer. The nucleation time was found to be strongly influenced by the substrate temperature and was more than 30 min for the applied growth conditions. The observed tapering and reduced length of silicon-doped nanorods is explained by enhanced nucleation on nonpolar facets and proves Ga-adatom diffusion on nanorod sidewalls as one contribution to the axial growth. The presence of Mg leads to an increased radial growth rate with a simultaneous decrease of the nanorod length and reduces the nucleation time for high Mg concentrations. (C) 2008 American Institute of Physics.

引用

页数：7

共 22 条

[1]

ARBIOL J, UNPUB

[2] Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy [J].

Beaumont, B ;

Haffouz, S ;

Gibart, P .

APPLIED PHYSICS LETTERS, 1998, 72 (08) :921-923

[3] Spontaneously grown GaN and AlGaN nanowires [J].

Bertness, KA ;

Roshko, A ;

Sanford, NA ;

Barker, JM ;

Davydov, A .

JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) :522-527

[4] Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy [J].

Calleja, E ;

Sánchez-García, MA ;

Sánchez, FJ ;

Calle, F ;

Naranjo, FB ;

Muñoz, E ;

Jahn, U ;

Ploog, K .

PHYSICAL REVIEW B, 2000, 62 (24) :16826-16834

[5] Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy [J].

Chen, Hung-Ying ;

Lin, Hon-Way ;

Shen, Chang-Hong ;

Gwo, Shangjr .

APPLIED PHYSICS LETTERS, 2006, 89 (24)

[6] Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111) [J].

Debnath, R. K. ;

Meijers, R. ;

Richter, T. ;

Stoica, T. ;

Calarco, R. ;

Lueth, H. .

APPLIED PHYSICS LETTERS, 2007, 90 (12)

[7]

FURTMAYR F, J APPL PHYS UNPUB

[8] Axial and radial growth of Ni-induced GaN nanowires [J].

Geelhaar, L. ;

Cheze, C. ;

Weber, W. M. ;

Averbeck, R. ;

Riechert, H. ;

Kehagias, Th. ;

Komninou, Ph. ;

Dimitrakopulos, G. P. ;

Karakostas, Th. .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

[9] Gallium nitride nanowire nanodevices [J].

Huang, Y ;

Duan, XF ;

Cui, Y ;

Lieber, CM .

NANO LETTERS, 2002, 2 (02) :101-104

[10] Mass transport model for semiconductor nanowire growth [J].

Johansson, J ;

Svensson, CPT ;

Mårtensson, T ;

Samuelson, L ;

Seifert, W .

JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (28) :13567-13571

← 1 2 3 →