Compact Deep UV System at 222.5 nm Based on Frequency Doubling of GaN Laser Diode Emission

被引:23
作者
Ruhnke, Norman [1 ]
Mueller, Andre [1 ]
Eppich, Bernd [1 ]
Maiwald, Martin [1 ]
Sumpf, Bernd [1 ]
Erbert, Goetz [1 ]
Traenkle, Guenther [1 ]
机构
[1] Ferdinand Braun Inst, Leibniz Inst Hochstfrequenztech, D-12489 Berlin, Germany
关键词
Diode lasers; light sources; nonlinear optics; optical harmonic generation; ultraviolet sources; RAMAN-SPECTROSCOPY; NARROW-BAND; ABSORPTION-SPECTROSCOPY; SEMICONDUCTOR-LASER; LIGHT-SOURCE; GENERATION; BLUE;
D O I
10.1109/LPT.2017.2787463
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Laser light sources emitting in the deep ultraviolet wavelength range between 210 and 230 nm are of great interest for spectroscopic applications. Here, a compact DUV diode laser system emitting at a wavelength of 222.5 nm is presented. The system is based on frequency doubling of the laser radiation from a micro-integrated GaN external cavity diode laser module (mu ECDL) emitting at 445 nm. The mu ECDL has an optical pump power of 1.4 W with an emission bandwidth of 35 pm. Narrowband laser radiation in continouos wave operation with an output power of 160 mu W at 222.5 nm is generated in a single-pass frequency doubling stage with a beta-BaB2O4 crystal. The results are suitable to address applications such as spectroscopic investigations of biological samples. The presented concept of a compact and efficient deep ultraviolet laser light source enables the realization of portable systems for which a small footprint and a low power consumption is essential.
引用
收藏
页码:289 / 292
页数:4
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