Quantitative analysis of Cu(In,Ga)Se2 thin films by secondary ion mass spectrometry using a total number counting method

被引：9

作者：

Jang, Jong Shik ^{[1
,2
]}

Hwang, Hye Hyen ^{[1
,6
]}

Kang, Hee Jae ^{[2
]}

Suh, Jung Ki ^{[3
]}

Min, Hyung Sik ^{[3
]}

Han, Myung Sub ^{[3
]}

Cho, Kyung Haeng ^{[3
]}

Chung, Yong-Duck ^{[4
,5
]}

Cho, Dae-Hyung ^{[4
,5
]}

Kim, Jeha ^{[4
,5
]}

Kim, Kyung Joong ^{[1
,6
]}

机构：

[1] KRISS, Div Ind Metrol, Taejon, South Korea

[2] Chungbuk Natl Univ, Dept Phys, Cheongju, Chungcheongbuk, South Korea

[3] KRISS, Ctr Analyt Chem, Taejon, South Korea

[4] ETRI, Adv Solar Technol Dept, Taejon, South Korea

[5] UST, Dept Adv Device Technol, Taejon, South Korea

[6] UST, Dept Nano & Bio Surface Sci, Taejon, South Korea

来源：

METROLOGIA | 2012年 / 49卷 / 04期

关键词：

SURFACE CHEMICAL-ANALYSIS; SENSITIVITY FACTORS; ELECTRON-SPECTROSCOPY; DEPTH; AES; MULTILAYER; RESOLUTION; ROUGHNESS; AUGER; XPS;

D O I：

10.1088/0026-1394/49/4/522

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The relative atomic fraction of Cu(In,Ga)Se-2 (CIGS) films is one of the most important measurements for the fabrication of CIGS thin film solar cells. However, the quantitative analysis of multi-element alloy films is difficult by surface analysis methods due to the severe matrix effect. In this study, the quantitative analysis of CIGS films was investigated by secondary ion mass spectrometry (SIMS). The atomic fractions of Cu, In, Ga and Se in the CIGS films were measured by alloy reference relative sensitivity factors derived from the certified atomic fractions of a reference CIGS film. The total ion intensities of the constituent elements were obtained by a total number counting method. The atomic fractions measured by SIMS were linearly proportional to those certified by inductively coupled plasma mass spectrometry using an isotope dilution method. The uncertainties were determined from the standard uncertainties in the measurements and those of a CIGS thin film certified reference material.

引用

页码：522 / 529

页数：8

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