Restoration of graphene from graphene oxide by defect repair

被引：233
|
作者：
Cheng, Meng [1 ]
Yang, Rong [1 ]
Zhang, Lianchang [1 ]
Shi, Zhiwen [1 ]
Yang, Wei [1 ]
Wang, Duoming [1 ]
Xie, Guibai [1 ]
Shi, Dongxia [1 ]
Zhang, Guangyu [1 ]
机构：
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源：
CARBON | 2012年 / 50卷 / 07期
基金：
美国国家科学基金会;
关键词：
CHEMICAL-REDUCTION; LARGE-AREA; FILMS;
D O I：
10.1016/j.carbon.2012.02.016
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A simple and efficient method to repair defects in graphene oxide (GO) is reported, accompanied by a simultaneous reduction process by a methane plasma. The graphene after repair is of high quality. For a typical monolayer after repair and reduction, the minimum sheet resistance at the Dirac point and the Raman DIG peak intensity ratio are about 9.0 k Omega/rectangle and similar to 0.53, respectively. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2581 / 2587
页数：7
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