High-Power High-Efficiency Asymmetric Doherty Amplifiers for Base Station Applications

被引：0

作者：

Watanabe, Naoki ^{[1
]}

Wong, James ^{[1
]}

Grebennikov, Andrei ^{[1
]}

Akiyama, Akira ^{[2
]}

机构：

[1] Sumitomo Elect Europe Ltd, 220 Centennial Pk,Centennial Ave, Elstree WD6 3SL, Herts, England

[2] Sumitomo Elect Device Innovat Inc, 1000 Kamisukiawara, Showa, Yamanashi 4093883, Japan

来源：

2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC) | 2018年

关键词：

RF power amplifier; gallium nitride (GaN); high electron mobility transistor (HEMT); impedance matching; efficiency; Doherty structure; transmission line;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the high-power high-efficiency asymmetric Doherty power amplifiers based on high-voltage GaN HEMT devices with internal input matching for base station applications are proposed and described. For a three-way 1:2 asymmetric Doherty structures, an exceptionally high output power of 1 kW with a peak efficiency of 83% and a linear flat power gain of about 15 dB was achieved in a frequency band of 2.11-2.17 GHz, whereas an output power of 59.5 dBm with a peak efficiency of 78% and linear power gain of 12 dB and an output power of 59.2 dBm with a peak efficiency of 65% and a linear power gain of 13 dB were obtained across 1.8-2.2 GHz and 2.45-2.7 GHz, respectively.

引用

页码：989 / 991

页数：3