A Novel Porous Silicon Composite Sensor for Formaldehyde Detection

被引:6
作者
Wang Wei [1 ]
Gao Yang [1 ]
Tao Qiang [1 ]
Liu Ying-Zi [1 ]
Zuo Juan-Juan [1 ]
Ju Xiao-Cui [1 ]
Zhang Juan-Kun [1 ]
机构
[1] Tianjin Univ Sci Technol, Key Lab Ind Microbiol, Tianjin Key Lab Ind Microbiol Coll Biotechnol, Minist Educ, Tianjin 300457, Peoples R China
关键词
Porous silicon preparation; Hydrothermal etching; Formaldehyde; Palladium-porous silicon; Gas sensor; GAS;
D O I
10.1016/S1872-2040(15)60829-5
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
A novel palladium-porous silicon (Pd-PS) composite sensor was introduced for convenient and fast formaldehyde detection. Porous silicon was prepared by hydrothermal etching method and its surface micro-structure was characterized by scanning electron microscope. By optimizing the corrosion conditions of porous silicon, the optimum preparation conditions of porous silicon were obtained. In addition, palladium-porous silicon composite sensor was finally prepared by chemical immersion method to dope the metal palladium on the surface of porous silicon. When the prepared sensor was exposed to the mixed gas with formaldehyde, it exhibited a highly selectivity to formaldehyde molecules and could generate electrochemical signal that responded to the change of gas concentration. By detecting the electrical signal with a multimeter, the gas sensing properties of the sensor were investigated and discussed. The results indicated that the sensor was more sensitive to formaldehyde, exhibiting good selectivity. However, it was not sensitive to ethanol, ammonia, methanol and acetone. The detection rang of the sensor to formaldehyde concentration was 0.1-6.0 mg m(-3), with the detection limit of 0.1 mg m(-3) and detection time of 3 min.
引用
收藏
页码:849 / 855
页数:7
相关论文
共 15 条
  • [1] BEHAVIOR OF POROUS SILICON EMISSION-SPECTRA DURING QUENCHING BY IMMERSION IN METAL-ION SOLUTIONS
    ANDSAGER, D
    HILLIARD, J
    NAYFEH, MH
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (09) : 1141 - 1143
  • [2] APSFET: a new, porous silicon-based gas sensing device
    Barillaro, G
    Nannini, A
    Pieri, F
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2003, 93 (1-3) : 263 - 270
  • [3] Chen J D, 2014, J LUMIN, V35, P185
  • [4] Mechanisms of photoluminescence sensor response of porous silicon for organic species in gas and liquid phases
    Chvojka, T
    Vrkoslav, V
    Jelínek, I
    Jindrich, J
    Lorenc, M
    Dian, J
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2004, 100 (1-2) : 246 - 249
  • [5] Deng Jian, 2014, Electroplating & Finishing, V33, P698
  • [6] Porous silicon organic vapor sensor
    Garcia Salgado, G.
    Diaz Becerril, T.
    Juarez Santiesteban, H.
    Rosendo Andres, E.
    [J]. OPTICAL MATERIALS, 2006, 29 (01) : 51 - 55
  • [7] A distributed Bragg reflector porous silicon layer for optical interferometric sensing of organic vapor
    Kim, Han-Jung
    Kim, Young-You
    Lee, Ki-Won
    Park, Seon-Hwa
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2011, 155 (02): : 673 - 678
  • [8] Porous silicon thin film as CO sensor
    Martinez, H. M.
    Rincon, N. E.
    Torres, J.
    Alfonso, J. E.
    [J]. MICROELECTRONICS JOURNAL, 2008, 39 (11) : 1354 - 1355
  • [9] The effect of etching time of porous silicon on solar cell performance
    Salman, Khaldun A.
    Omar, Khalid
    Hassan, Z.
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2011, 50 (06) : 647 - 658
  • [10] Optical immune sensors for the monitoring protein substances in the air
    Starodub, VM
    Fedorenko, LL
    Starodub, NF
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2000, 68 (1-3): : 40 - 47