Material design of GaN-based ferromagnetic diluted magnetic semiconductors

被引：296

作者：

Sato, K ^{[1
]}

Katayama-Yoshida, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Dept Condensed Matter Phys, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 5B期

关键词：

ab initio calculation; gallium nitride; diluted magnetic semiconductor; transition metal; material design;

D O I：

10.1143/JJAP.40.L485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Material design of GaN-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structure of 3d-transition-metal-atom-doped GaN was calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It was found that the ferromagnetic ground states were readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments. A simple explanation on the systematic behavior of the magnetic states in GaN-based diluted magnetic semiconductors is also given.

引用

页码：L485 / L487

页数：3

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