Electronically switchable bulk acoustic wave resonator based on paraelectric state ferroelectric films

被引：8

作者：

Kozyrev, A. B. ^{[1
]}

Mikhaylov, A. K. ^{[1
]}

Ptashnik, S. V. ^{[1
]}

Zinoviev, S. V. ^{[1
]}

Petrov, P. K. ^{[2
]}

Alford, N. M. ^{[2
]}

Wang, T. ^{[2
]}

机构：

[1] St Petersburg State Electrotech Univ, Dept Phys Elect & Technol, St Petersburg 197376, Russia

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

来源：

ELECTRONICS LETTERS | 2011年 / 47卷 / 24期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1049/el.2011.3006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electromechanical properties of multilayer microwave capacitance structures with two ferroelectric films in the paraelectric state are analysed. A film bulk acoustic wave resonator (FBAR) with about two times (approximately octave) resonance frequency switching is demonstrated. The switching phenomenon is due to the application of a unidirectional or oppositely directed DC control E-field to ferroelectric layers that results in the excitation of different acoustic eigenmodes in the resonator structure.

引用

页码：1326 / 1327

页数：2

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