Photo- and Electro-Luminescence at 1.54 μm from Er3+ in SiC:Er2O3 Films and Structures

被引：0
|
作者：
Yin Yang [1 ,2 ]
Ran Guang-Zhao [1 ,2 ]
Zhang Bin [3 ]
Qin Guo-Gang [1 ,2 ]
机构：
[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
[2] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[3] Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2011年 / 28卷 / 07期
基金：
中国国家自然科学基金;
关键词：
WAVE-GUIDE AMPLIFIERS; SILICON; PHOTOLUMINESCENCE; LUMINESCENCE;
D O I：
10.1088/0256-307X/28/7/077801
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
SiC:Er2O3 films with different ratios of SiC to SiC:Er2O3 are deposited on p-type Si substrates by the magnetron co-sputtering technique, which was fully compatible with current Si processing technologies. Intense room temperature 1.54 mu m photoluminescence (PL) from Er3+ ions in the SiC:Er2O3 films is observed and the PL intensity at 1.54 mu m is enhanced by about 40 times with increasing Er concentration in the films from 0.8 to 22 at.% under both direct and indirect excitations. The 1.54 mu m electroluminescence from the structure of indium tin oxide (ITO)/n(+) -Si/SiC:Er2O3/p-Si with suitable ratios of SiC to SiC:Er2O3 is measured under forward biases.
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页数：4
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