Structural and optical properties of AlInN films grown on sapphire substrates

被引：36

作者：

Guo, Qixin ^{[1
]}

Tanaka, Tooru ^{[1
]}

Nishio, Mitsuhiro ^{[1
]}

Ogawa, Hiroshi ^{[1
]}

机构：

[1] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 01期

关键词：

III-V semiconductor; AlInN; crystal structure; surface morphology; optical properties;

D O I：

10.1143/JJAP.47.612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the structural and optical properties of AlInN films grown on (0001) sapphire substrates by reactive radio-frequency (rf) magnetron sputtering using aluminum and indium targets in an ambient of argon and nitrogen. X-ray diffraction analysis and atomic force microscopy show that AlInN films with a smooth surface can be obtained and that the lattice constant for the c-axis obtained from the (0002) diffraction peak of the AlInN films decreases with an increase in the Al composition x. Optical transmittance and reflectance spectra analysis reveals that the AlInN films are of a direct bandgap structure as AlN and InN. The bandgap energy of the AlInN films can be tailored by varying the ratio of the rf power of the indium target to that of the aluminiurn target.

引用

页码：612 / 615

页数：4

共 50 条

[1] Structural and optical properties of AlInN films grown on sapphire substrates
Guo, Qixin
Tanaka, Tooru
Nishio, Mitsuhiro
Ogawa, Hiroshi
Japanese Journal of Applied Physics, 2008, 47 (1 PART 2): : 612 - 615
[2] Structural and optical properties of VO2 thin films grown on sapphire substrates
Ma, Jianwei
Song, Yarui
Xu, Gang
ADVANCED TECHNOLOGIES IN MANUFACTURING, ENGINEERING AND MATERIALS, PTS 1-3, 2013, 774-776 : 585 - +
[3] Structural and optical properties of ZnO films grown on sapphire substrates subjected to substrate temperature
Cho, Shinho
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (03) : 985 - 988
[4] Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates
Kucera, Michal
Adikimenakis, Adam
Dobrocka, Edmund
Kudela, Robert
Tapajna, Milan
Laurencikova, Agata
Georgakilas, Alexandros
Kuzmik, Jan
THIN SOLID FILMS, 2019, 672 : 114 - 119
[5] Electronic and structural properties of InN thin films grown by MOMBE on sapphire substrates
Aderhold, J
Davydov, VY
Fedler, F
Klausing, H
Mistele, D
Rotter, T
Semchinova, O
Stemmer, J
Graul, J
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 82 - 86
[6] An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE
Torma, P. T.
Ali, M.
Svensk, O.
Sintonen, S.
Kostamo, P.
Suihkonen, S.
Sopanen, M.
Lipsanen, H.
Odnoblyudov, M. A.
Bougrov, V. E.
PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4911 - 4915
[7] Magnetooptical properties of ZnMnTe films grown on sapphire substrates
Imamura, Masaaki
Okada, Akira
IEEE TRANSACTIONS ON MAGNETICS, 2006, 42 (10) : 3078 - 3080
[8] Effect of nitridation time on structural, optical and electrical properties of InN films grown on c-sapphire substrates by PAMBE
Kankat Ghosh
Ritam Sarkar
Swagata Bhunia
Apurba Laha
Journal of Materials Science: Materials in Electronics, 2018, 29 : 3927 - 3934
[9] Effect of nitridation time on structural, optical and electrical properties of InN films grown on c-sapphire substrates by PAMBE
Ghosh, Kankat
Sarkar, Ritam
Bhunia, Swagata
Laha, Apurba
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (05) : 3927 - 3934
[10] Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD
HOU Chang-min 1
2. College of Electronic Science and Engineering
Chemical Research in Chinese Universities, 2006, (05) : 552 - 555

← 1 2 3 4 5 →