Molecular beam epitaxy and characterization of thin Bi2Se3 films on Al2O3 (110)

被引：50

作者：

Tabor, Phillip ^{[1
]}

Keenan, Cameron ^{[1
]}

Urazdhin, Sergei ^{[1
]}

Lederman, David ^{[1
]}

机构：

[1] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 01期

关键词：

TOPOLOGICAL-INSULATOR; SURFACE;

D O I：

10.1063/1.3609326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and electronic properties of thin Bi2Se3 films grown on Al2O3 (110) by molecular beam epitaxy are investigated. The epitaxial films grow in the Frank-van der Merwe mode and are c-axis oriented. They exhibit the highest crystallinity, the lowest carrier concentration, and optimal stoichiometry at a substrate temperature of 200 degrees C determined by the balance between surface kinetics and desorption of Se. The crystallinity of the films improves with increasing Se/Bi flux ratio. Our results enable studies of thin topological insulator films on inert, non-conducting substrates that allow optical access to both film surfaces. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609326]

引用

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