The missing memristor found

被引:8810
作者
Strukov, Dmitri B. [1 ]
Snider, Gregory S. [1 ]
Stewart, Duncan R. [1 ]
Williams, R. Stanley [1 ]
机构
[1] HP Labs, Palo Alto, CA 94304 USA
关键词
D O I
10.1038/nature06932
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor ( short for memory resistor)(1). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid- state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current - voltage behaviour observed in many nanoscale electronic devices(2-19) that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross- point switches(20-22).
引用
收藏
页码:80 / 83
页数:4
相关论文
共 26 条
  • [1] Reproducible switching effect in thin oxide films for memory applications
    Beck, A
    Bednorz, JG
    Gerber, C
    Rossel, C
    Widmer, D
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (01) : 139 - 141
  • [2] Internal structure of a molecular junction device:: Chemical reduction of PtO2 by Ti evaporation onto an interceding organic monolayer
    Blackstock, Jason J.
    Stickle, William F.
    Donley, Carrie L.
    Stewart, Duncan R.
    Williams, R. Stanley
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (01) : 16 - 20
  • [3] ELECTROCOLORATION IN SRTIO - VACANCY DRIFT AND OXIDATION-REDUCTION OF TRANSITION METALS
    BLANC, J
    STAEBLER, DL
    [J]. PHYSICAL REVIEW B, 1971, 4 (10): : 3548 - &
  • [4] MEMRISTIVE DEVICES AND SYSTEMS
    CHUA, LO
    KANG, SM
    [J]. PROCEEDINGS OF THE IEEE, 1976, 64 (02) : 209 - 223
  • [5] MEMRISTOR - MISSING CIRCUIT ELEMENT
    CHUA, LO
    [J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05): : 507 - +
  • [6] A [2]catenane-based solid state electronically reconfigurable switch
    Collier, CP
    Mattersteig, G
    Wong, EW
    Luo, Y
    Beverly, K
    Sampaio, J
    Raymo, FM
    Stoddart, JF
    Heath, JR
    [J]. SCIENCE, 2000, 289 (5482) : 1172 - 1175
  • [7] ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS
    DEARNALEY, G
    STONEHAM, AM
    MORGAN, DV
    [J]. REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) : 1129 - +
  • [8] A nonvolatile 2-Mbit CBRAM memory core featuring advanced read and program control
    Dietrich, Stefan
    Angerbauer, Michael
    Ivanov, Milena
    Gogl, Dietmar
    Hoenigschmid, Heinz
    Kund, Michael
    Liaw, Corvin
    Markert, Michael
    Symanczyk, Ralf
    Altimime, Laith
    Bournat, Serge
    Mueller, Gerhard
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (04) : 839 - 845
  • [9] Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films
    Hamaguchi, M
    Aoyama, K
    Asanuma, S
    Uesu, Y
    Katsufuji, T
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (14)
  • [10] LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS
    HICKMOTT, TW
    [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2669 - &