Polar properties of a hexagonally bonded GaN sheet under biaxial compression

被引：18

作者：

Gao, Yanlin ^{[1
]}

Yayama, Tomoe ^{[2
]}

Okada, Susumu ^{[1
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan

[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 09期

基金：

日本科学技术振兴机构;

关键词：

ELECTRONIC-STRUCTURE; GALLIUM NITRIDE; BORON-NITRIDE; PREDICTION; STATES; BULK;

D O I：

10.7567/APEX.9.095201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the density functional theory, we study the geometric and electronic structures of a GaN sheet possessing a honeycomb network. The sheet preserves the planar conformation under an equilibrium lattice constant of 3.2 angstrom, and has a semiconducting electronic structure with an indirect band gap of 2.28 eV. The biaxial compressive strain causes structural buckling, leading to polarization normal to the atomic layer. An external electric field normal to the layer also induces structural buckling with a height proportional to the field strength. The polarity of the buckled GaN sheet is tunable by attaching H atoms on Ga and N atoms. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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