High-power and long-lifetime InGaN blue-violet laser diodes grown by molecular beam epitaxy

被引：4
|
作者：
Tan, W. S. [1 ]
Kauer, M. [1 ]
Hooper, S. E. [1 ]
Barnes, J. M. [1 ]
Rossetti, M. [1 ]
Smeeton, T. M. [1 ]
Bousquet, V. [1 ]
Heffernan, J. [1 ]
机构：
[1] Europe Ltd, Sharp Labs, Oxford OX4 4GB, England
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 05期
关键词：
D O I：
10.1049/el:20083456
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaN 405 nm multiple quantum well laser diodes grown by molecular beam epitaxy (MBE) with a continuous-wave (CW) lifetime of Lip to 42 h are reported. The CW threshold current density of the ridge wave-guide laser diodes is 3.6 kA/cm(2) and the slope efficiency for uncoated facets is 0.42 W/A per facet with a maximum CW output power of 45 mW per facet. Statistical variation of CW lifetime with dissipated power is presented for MBE-grown laser diodes from five different wafers.
引用
收藏
页码：351 / 353
页数：3
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