Atomic-scale perspective on the origin of attractive step interactions on Si(113)

被引:8
|
作者
Ciobanu, CV
Tambe, DT
Shenoy, VB
Wang, CZ
Ho, KM
机构
[1] Brown Univ, Div Engn, Providence, RI 02912 USA
[2] Iowa State Univ, Dept Phys, Ames, IA 50011 USA
[3] Iowa State Univ, Ames Lab, US DOE, Ames, IA 50011 USA
关键词
ORIENTATIONAL PHASE-DIAGRAM; VICINAL SURFACES; BUNCHING TRANSITIONS; TRICRITICALITY; MISCUT; VACANCIES; SILICON;
D O I
10.1103/PhysRevB.68.201302
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recent experiments have shown that steps on Si(113) surfaces self-organize into bunches due to a competition between long-range repulsive and short-range attractive interactions. Using empirical and tight-binding interatomic potentials, we investigate the physical origin of the short-range attraction, and report the formation and interaction energies of steps. We find that the short-range attraction between steps is due to the annihilation of force monopoles at their edges as they combine to form bunches. Our results for the strengths of the attractive interactions are consistent with the values determined from experimental studies on kinetics of faceting.
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页数:4
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