Thin film polycrystalline silicon solar cells on mullite ceramics

被引：16
作者：
Focsa, A. [1 ]
Gordon, I. [2 ]
Auger, J. M. [3 ]
Slaoui, A. [1 ]
Beaucarne, G. [2 ]
Poortmans, J. [2 ]
Maurice, C. [3 ]
机构：
[1] ULP, CNRS, InESS, F-67037 Strasbourg 2, France
[2] IMEC, B-3001 Louvain, Belgium
[3] Ecole Natl Super Mines, SMS Ctr, F-42023 St Etienne, France
来源：
RENEWABLE ENERGY | 2008年 / 33卷 / 02期
关键词：
polycrystalline silicon; CVD; ceramics; solar cells; hydrogenation;
D O I：
10.1016/j.renene.2007.05.038
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
In this work, we present the structural quality of polycrystalline silicon films formed by high-temperature chemical vapor deposition (CVD) on mullite ceramics coated with spin-on flowable oxides (FOx) serving as intermediate layers (ILs). The average grain size and the size distribution were investigated by optical microscopy. It is found that more than 65% of the surface of polysilicon films grown on boron-doped FOx is covered by large grains of 5-10 mu m. The intra-grain and inner-grain defects as well as the grain orientation were analyzed with the electron backscattering diffraction (EBSD) technique. Twin-type defects such as Sigma 3 and Sigma 9 are frequently present in these silicon layers, which are slightly (I 10) preferentially oriented. Finally, we present the photovoltaic data on test solar cells made on these CVD polysilicon films. An efficiency of about 3.3% is reported. The limiting factors, as well as possible improvements, are discussed. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：267 / 272
页数：6
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