Impact of doping on the performance of short-wavelength InP-based quantum-cascade lasers

被引：30
作者：
Mujagic, E. [1 ]
Austerer, M. [1 ]
Schartner, S. [1 ]
Nobile, M. [1 ]
Hoffmann, L. K. [1 ]
Schrenk, W. [1 ]
Strasser, G. [1 ]
Semtsiv, M. P. [2 ]
Bayrakli, I. [2 ]
Wienold, M. [2 ]
Masselink, W. T. [2 ]
机构：
[1] Vienna Univ Technol, Inst Solid State, A-1040 Vienna, Austria
[2] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 03期
基金：
奥地利科学基金会;
关键词：
D O I：
10.1063/1.2837871
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of doping concentration on the performance of short-wavelength quantum-cascade lasers based on the strain-compensated InGaAs/InAlAs/AlAs heterostructure on InP, emitting at 3.8 mu m, is investigated for average doping concentrations between 0.3 and 3.9x10(17) cm(-3) (sheet densities between 1.6 and 20.9x10(11) cm(-2)). Although the threshold current density is rather independent of doping concentration, the maximum current density increases with doping and exhibits a saturation for the highest doping level. Other important performance characteristics such as differential quantum efficiency, peak optical emission power, slope efficiency, and maximum operating temperature are observed to be maximized for structures with an average doping of 2-3x10(17) cm(-3), corresponding to a sheet density of about 1.5x10(12) cm(-2). (c) 2008 American Institute of Physics.
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页数：4
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