Placement error in directed self-assembly of block copolymers for contact hole application

被引:4
作者
Bouanani, Shayma [1 ,2 ]
Tiron, Raluca [2 ]
Bos, Sandra [2 ]
Gharbi, Ahmed [2 ]
Barros, Patricia Pimenta [2 ]
Hazart, Jerome [2 ]
Robert, Frederic [1 ]
Lapeyre, Celine [1 ,2 ]
Ostrovsky, Alain [1 ]
Monget, Cedric [1 ]
机构
[1] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France
[2] CEA LETI, MINATEC Campus,17 Rue Martyrs, F-38054 Grenoble, France
来源
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2016年 / 15卷 / 02期
关键词
directed self-assembly; placement error; metrology; process window; LITHOGRAPHY;
D O I
10.1117/1.JMM.15.2.021407
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Directed self-assembly (DSA) of block copolymers has shown interesting results for contact hole application, as a vertical interconnection access for CMOS sub-10 nm technology. The control of critical dimension uniformity (CDU), defectivity, and placement error (PE) is challenging and depends on multiple processes and material parameters. This paper reports the work done using the 300-mm pilot line available in materials to integrate the DSA process on contact and via level patterning. In the first part, a reliable methodology for PE measurement is defined. By tuning intrinsic edge detection parameters on standard reference images, the working window is determined. The methodology is then implemented to analyze the experimental data. The impact of the planarization process on PE and the importance of PE as a complement of CDU and hole open yield for process window determination are discussed. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
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页数:8
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