Power Trench MOSFETs with very low specific on-resistance for 25 V applications

被引：8
|
作者：
Goarin, Pierre [1 ]
van Dalen, Rob [1 ]
Koops, Gerhard [1 ]
Le Cam, Christelle [1 ]
机构：
[1] NXP Semiconductors, B-3001 Louvain, Belgium
来源：
SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 11-12期
关键词：
Trench MOSFET; miller charge; specific on-resistance; implants topology;
D O I：
10.1016/j.sse.2007.09.035
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an investigation of the benefits of deep ultra violet lithography for the manufacturing of Trench MOSFETs and its impact on device performance is presented. We discuss experimental results for devices with a pitch size down to 0.6 mu m fabricated with an unconventional implant topology and a simplified manufacturing scheme. The fabricated Trench MOSFETs are benchmarked against previously published TrenchMOS technologies by de-embedding the parasitic substrate resistance, revealing a record-low specific on-resistance of 5.3 m Omega mm(2) at a breakdown voltage of 30 V (V-gs = 10 V). (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1589 / 1595
页数：7
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