Edge of Chaos Is Sine Qua Non for Turing Instability

被引:26
作者
Ascoli, Alon [1 ]
Demirkol, Ahmet Samil [1 ]
Tetzlaff, Ronald [1 ]
Chua, Leon [2 ]
机构
[1] Tech Univ Dresden, Inst Circuits & Syst, Fac Elect & Comp Engn, D-01069 Dresden, Germany
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
关键词
Smale paradox; turing instability; Prigogine symmetry-breaking; destabilization of the homogeneous; emergent phenomena; pattern formation; two-cell reaction-diffusion system; cellular nonlinear/neural/nanoscale network; bio-inspired memristor oscillator; NaMLab NbOx memristor; threshold switch; theory of local activity; edge of chaos principle; DYNAMICS;
D O I
10.1109/TCSI.2022.3194465
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Diffusion-driven instabilities with pattern formation may occur in a network of identical, regularly-spaced, and resistively-coupled cells if and only if the uncoupled cell is poised on a locally-active and stable operating point in the Edge of Chaos domain. This manuscript presents the simplest ever-reported two-cell neural network, combining together only 7 two-terminal components, namely 2 batteries, 3 resistors, and 2 volatile NbOx memristive threshold switches from NaMLab, and subject to diffusion-driven instabilities with the concurrent emergence of Turing patterns. Very remarkably, this is the first time an homogeneous cellular medium, with no other dynamic element than 2 locally-active memristors, hence the attribute all-memristor coined to address it in this paper, is found to support complex phenomena. The destabilization of the homogeneous solution occurs in this second-order two-cell array if and only if the uncoupled cell circuit parameters are chosen from the Edge of Chaos domain. A deep circuit- and system-theoretic investigation, including linearization analysis and phase portrait investigation, provides a comprehensive picture for the local and global dynamics of the bio-inspired network, revealing how a theory-assisted approach may guide circuit design with inherently non-linear memristive devices.
引用
收藏
页码:4596 / 4609
页数:14
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