Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

被引：3

作者：

Haseneohrl, Stanislav ^{[1
]}

Chauhan, Prerna ^{[1
]}

Dobrocka, Edmund ^{[1
]}

Stoklas, Roman ^{[1
]}

Vanco, L'ubomir ^{[2
]}

Vesely, Marian ^{[2
]}

Bouazzaoui, Farah ^{[3
]}

Chauvat, Marie-Pierre ^{[3
]}

Ruterana, Pierre ^{[3
]}

Kuzmik, Jan ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Dubrayska Cesta 9, Bratislava 84104, Slovakia

[2] Slovak Univ Technol Bratislava, Univ Sci Pk Bratislava Ctr, Vazovova 5, Bratislava 81243, Slovakia

[3] Ctr Rech Ions Mat & Photon, Blvd du Marechal Juin, F-14050 Caen 4, France

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 01期

关键词：

UNINTENTIONAL INCORPORATION; EPITAXIAL-GROWTH; INALN/(IN)GAN; POLARIZATION; SCATTERING; GALLIUM; ORIGINS; LAYERS; ALINN;

D O I：

10.7567/1882-0786/aaef41

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAIN/GaN structures are grown using organometallic chemical vapor deposition at 730 degrees C. The sample for which the chamber cleaning step was applied after GaN growth shows a sharp In0.3Al0.7 N/GaN transition, free electron density of similar to 2 x 10(11)cm(-2) and mobility of 44 cm(2) V( -1)s( -1). On the other hand, the sample prepared without growth interruption demonstrated In-0.4 Al0.15Ga0.45N at the interface and compositional grading towards the In-0.4 Al-0.6 N surface. In this case a two-dimensional hole gas (2DHG) is created with a density of similar to 2 x 10(12)cm(-2) and mobility of similar to 0.6 cm(2)V(-1)s(-1). Ga incorporation in the InAIN barrier is crucial for designing non-inverted 2DHG transistors. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

共 31 条

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