Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements

被引：10
作者：
Wang, D
Ninomiya, M
Nakamae, M
Nakashima, H
机构：
[1] Kyushu Univ, Art Sci & Technol Ctr Cooperat Res, Fukuoka 8168580, Japan
[2] Sumitomo Mitsubishi Silicon Corp, Kohoku, Saga 8490579, Japan
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 12期
关键词：
D O I：
10.1063/1.1891303
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interface states density (Nss) and minority carrier generation lifetime (tau(g)) were evaluated for strained Si(St-Si)/SiGe wafers using deep level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows an independence on St-Si thickness (d(Si)) and an obvious dependence on Ge fraction (Ge%). tau(g) shows a strong dependence on both d(Si) and Ge%. The reasons of these dependencies are discussed in detail. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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