Electroluminescence from metal-oxide-semiconductor devices based on erbium silicate nanocrystals and silicon nanocrystals co-embedded in silicon oxide thin films

被引：13

作者：

He, Majun ^{[1
]}

Yang, Deren ^{[1
]}

Li, Dongsheng ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2021年 / 32卷 / 15期

基金：

国家重点研发计划;

关键词：

INFRARED ELECTROLUMINESCENCE; MU-M; ER;

D O I：

10.1007/s10854-021-06579-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A metal-oxide-semiconductor (MOS) electroluminescence device based on erbium silicate nanocrystals and silicon nanocrystals co-embedded in silicon oxide films fabricated by reactive magnetron co-sputtering on silicon substrate is reported. It was found that annealing temperatures have great influence on the structural composition of the deposited films. Only at 1100 degrees C annealing temperature, erbium silicate nanocrystals and silicon nanocrystals co-embedded in silicon oxide films formed. The MOS devices based on films with 112.9 % excess Si annealed at 1100 degrees C exhibited the lowest 20 V threshold voltage, highest near-infrared electroluminescence intensity, and external quantum efficiency (1.64*10(-3)) at 1540 nm because these films can combine the excellent optical activity of crystalline erbium silicate with better conductivity improved by Si nanocrystals.

引用

页码：20659 / 20667

页数：9

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