Electron microscopy of quantum dots

被引：6

作者：

Walther, T. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF MICROSCOPY | 2015年 / 257卷 / 03期

关键词：

Chemical composition; microstructure; electron microscopy; quantum dots; size distribution; strain; SCANNING-TUNNELING-MICROSCOPY; ENERGY-LOSS SPECTROSCOPY; STRANSKI-KRASTANOW TRANSITION; PARTICLE-SIZE DISTRIBUTIONS; HIGH-RESOLUTION; ISLAND STRUCTURES; SURFACE; GROWTH; IMAGES; GAAS;

D O I：

10.1111/jmi.12196

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

This brief review describes the different types of semiconductor quantum dot systems, their main applications and which types of microscopy methods are used to characterize them. Emphasis is put on the need for a comprehensive investigation of their size distribution, microstructure, chemical composition, strain state and electronic properties, all of which influence the optical properties and can be measured by different types of imaging, diffraction and spectroscopy methods in an electron microscope.

引用

页码：171 / 178

页数：8

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