Electron microscopy of quantum dots

被引：6
|
作者：
Walther, T. [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
JOURNAL OF MICROSCOPY | 2015年 / 257卷 / 03期
关键词：
Chemical composition; microstructure; electron microscopy; quantum dots; size distribution; strain; SCANNING-TUNNELING-MICROSCOPY; ENERGY-LOSS SPECTROSCOPY; STRANSKI-KRASTANOW TRANSITION; PARTICLE-SIZE DISTRIBUTIONS; HIGH-RESOLUTION; ISLAND STRUCTURES; SURFACE; GROWTH; IMAGES; GAAS;
D O I：
10.1111/jmi.12196
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
This brief review describes the different types of semiconductor quantum dot systems, their main applications and which types of microscopy methods are used to characterize them. Emphasis is put on the need for a comprehensive investigation of their size distribution, microstructure, chemical composition, strain state and electronic properties, all of which influence the optical properties and can be measured by different types of imaging, diffraction and spectroscopy methods in an electron microscope.
引用
收藏
页码：171 / 178
页数：8
相关论文
共 50 条
  • [1] Photoemission Microscopy Studies of Quantum Dots and Rings
    Biasiol, Giorgio
    Heun, Stefan
    Sorba, Lucia
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2011, 6 (01) : 20 - 33
  • [2] Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide
    Walther, Thomas
    NANOMATERIALS, 2019, 9 (06)
  • [3] Transmission electron microscopy of semiconductor quantum dots
    Liu, CP
    Miller, PD
    Henstrom, WL
    Gibson, JM
    JOURNAL OF MICROSCOPY-OXFORD, 2000, 199 : 130 - 140
  • [4] Electron microscopy of GaAs Structures with InAs and as quantum dots
    V. N. Nevedomskii
    N. A. Bert
    V. V. Chaldyshev
    V. V. Preobrazhenskii
    M. A. Putyato
    B. R. Semyagin
    Semiconductors, 2011, 45 : 1580 - 1582
  • [5] The ballistic electron emission microscopy in the characterization of quantum dots
    Hutagalung, S. D.
    Yaacob, K. A.
    Keat, Y. C.
    NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2, 2007, 121-123 : 529 - 532
  • [6] Electron Microscopy of GaAs Structures with InAs and As Quantum Dots
    Nevedomskii, V. N.
    Bert, N. A.
    Chaldyshev, V. V.
    Preobrazhenskii, V. V.
    Putyato, M. A.
    Semyagin, B. R.
    SEMICONDUCTORS, 2011, 45 (12) : 1580 - 1582
  • [7] Electron microscopy investigations of V defects in multiple InGaN/GaN quantum wells and InGaN quantum dots
    Yang, J. R.
    Li, W. C.
    Tsai, H. L.
    Hsu, J. T.
    Shiojiri, M.
    JOURNAL OF MICROSCOPY, 2010, 237 (03) : 275 - 281
  • [8] Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence
    Hsu, Chiung-Chih
    Hsu, Ray-Quen
    Wu, Yue-Han
    Chi, Tung-Wei
    Chiang, Chen-Hao
    Chen, Jenn-Fang
    Chang, Mao-Nan
    ULTRAMICROSCOPY, 2008, 108 (11) : 1495 - 1499
  • [9] Ballistic electron emission microscopy (BEEM) and spectroscopy of buried semiconductor heterostructures and quantum dots
    Narayanamurti, V
    SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY, 1997, 44 (02): : 165 - 172
  • [10] Exploring semiconductor quantum dots and wires by high resolution electron microscopy
    Molina, S. I.
    Galindo, P. L.
    Gonzalez, L.
    Ripalda, J. M.
    Varela, M.
    Pennycook, S. J.
    16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 2010, 209
12345