Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations

被引：4

作者：

Persheyev, SK ^{[1
]}

Smirnov, V

O'Neill, KA

Reynolds, S

Rose, MJ

机构：

[1] Univ Dundee, Carnegie Lab Phys, Elect Engn & Phys Div, Dundee DD1 4HN, Scotland

[2] Univ Abertay Dundee, Sch Comp & Adv Technol, EPI Ctr, Dundee DD1 1HG, Scotland

来源：

SEMICONDUCTORS | 2005年 / 39卷 / 03期

关键词：

D O I：

10.1134/1.1882798

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hot-wire chemical-vapor-disposition (CVD) thin silicon films are studied by means of dark conductivity, FTIR, hydrogen evolution, and SEM surface characterization. Three types of metastability are observed: (1) long term irreversible degradation due to oxidization processes on the film surface, (2) reversible degradation determined by uncontrolled water and/or oxygen adsorption, and (3) a fast field-switching effect in the film bulk. We propose that this effect is associated with the morphology changes during film growth and an electrical field induced by adsorbed atmospheric components on the film surface. It is found that metastable processes close to the film surface are stronger than in the bulk. (c) 2005 Pleiades Publishing, Inc.

引用

页码：343 / 346

页数：4

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