Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment

被引：15

作者：

Zhou, X. L. ^{[1
]}

Chen, Y. H. ^{[1
]}

Zhang, H. Y. ^{[1
]}

Zhou, G. Y. ^{[1
]}

Li, T. F. ^{[1
]}

Liu, J. Q. ^{[1
]}

Ye, X. L. ^{[1
]}

Xu, Bo ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 08期

基金：

中国国家自然科学基金;

关键词：

INAS ISLANDS; MU-M; ESCAPE; GAAS; GAAS(100); SUBSTRATE;

D O I：

10.1063/1.3572238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Considering the direct quantum tunneling of carrier, we propose a new carrier rate equation model to simulate the temperature dependent photoluminescence (TDPL) of InAs/GaAs quantum dots (QDs). The TDPL showed abnormal variations: the peak rapid redshift, linewidth shrinkage, and thermal activation energy all decreased with increasing tunneling strength. A criterion, which could be used to evaluate the tunneling strength, has been developed. That is, smaller tunneling strength coefficient a indicates higher carrier tunneling strength. Meanwhile, the criterion is also demonstrated via comparative experimental results of InAs QDs grown on different patterned GaAs substrates. It is found that, to some extent, the tunneling strength would be enhanced by decreasing the dot-dot distance for closely arranged QDs ensembles. (C) 2011 American Institute of Physics. [doi:10.1063/1.3572238]

引用

页数：7

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