Improved Uniformity of Sequential Lateral Solidification Thin-Film Transistors

被引：7

作者：

Kang, Myung-Koo ^{[1
]}

Kim, Si Joon ^{[2
]}

Kim, Hyun Jae ^{[2
]}

机构：

[1] Samsung Mobile Display, Cheonan 330300, South Korea

[2] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 06期

关键词：

Crystallization; semiconductor thin films; silicon; thin-film transistors (TFTs); SILICON FILMS; SI FILMS;

D O I：

10.1109/LED.2011.2131112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The uniformity of threshold voltage (V(th)) in sequential lateral solidification (SLS) thin-film transistors (TFTs) is investigated. Some SLS TFTs have higher V(th) values than others, which causes problems in applications requiring a high level of TFT uniformity such as active-matrix organic light-emitting diode displays. Focused ion beam observations revealed that all TFTs with high V(th) values had protrusions 3000-7000 angstrom from the junction. Using a smart tilted-channel structure decreased the V(th) variation to less than 0.2 V.

引用

页码：767 / 769

页数：3

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