Diffraction from anisotropic random rough surfaces

被引:17
作者
Zhao, YP [1 ]
Wang, GC
Lu, TM
机构
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 11期
关键词
D O I
10.1103/PhysRevB.58.7300
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The diffraction beam from an anisotropic, random, rough surface is investigated. Two kinds of anisotropic surfaces with either a correlation-length anisotropy or a scaling anisotropy are considered. For the correlation-length anisotropic surface with an isotropic scaling, the shape of the diffraction beam directly reflects the surface anisotropy under any diffraction condition. However, for the correlation-length anisotropic surface with an anisotropic scaling, the anisotropic scaling exponents may alter the anisotropy in the diffraction beam shape, sometimes even rotating the direction of anisotropy as the diffraction condition q(perpendicular to)w changes. Here q(perpendicular to) and w an the momentum transfer perpendicular to the surface and the interface width, respectively. This result demonstrates that one must be cautious when analyzing anisotropic diffraction beams. These results also provide a way to differentiate experimentally the correlation length anisotropy from the scaling anisotropy in anisotropic rough surfaces.
引用
收藏
页码:7300 / 7309
页数:10
相关论文
共 21 条
[1]  
[Anonymous], 1993, DIFFRACTION ROUGH SU
[2]  
Barabasi A-Ls, 1995, FRACTAL CONCEPTS SUR, DOI [10.1017/CBO9780511599798, DOI 10.1017/CBO9780511599798]
[3]  
CHENOV LA, 1960, WAVE PROPAGATION RAN
[4]   KINETIC SURFACE ROUGHENING IN MOLECULAR-BEAM EPITAXY OF INP [J].
COTTA, MA ;
HAMM, RA ;
STALEY, TW ;
CHU, SNG ;
HARRIOTT, LR ;
PANISH, MB ;
TEMKIN, H .
PHYSICAL REVIEW LETTERS, 1993, 70 (26) :4106-4109
[5]   QUANTITATIVE METHODS FOR ANALYZING THE ROUGHNESS OF THE SEAFLOOR [J].
FOX, CG ;
HAYES, DE .
REVIEWS OF GEOPHYSICS, 1985, 23 (01) :1-48
[6]  
GOFFIS CF, 1989, RASS LETT ITAL, V93, P13
[7]   ANISOTROPIC ROUGHNESS IN GE/SI SUPERLATTICES [J].
HEADRICK, RL ;
BARIBEAU, JM ;
STRAUSSER, YE .
APPLIED PHYSICS LETTERS, 1995, 66 (01) :96-98
[8]   INSITU SCANNING TUNNELING MICROSCOPY OBSERVATION OF SURFACE-MORPHOLOGY OF GAAS(001) GROWN BY MOLECULAR-BEAM EPITAXY [J].
HELLER, EJ ;
LAGALLY, MG .
APPLIED PHYSICS LETTERS, 1992, 60 (21) :2675-2677
[9]   Anisotropic surface growth model in disordered media [J].
Jeong, H ;
Kahng, B ;
Kim, D .
PHYSICAL REVIEW LETTERS, 1996, 77 (25) :5094-5097
[10]   Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates [J].
Lee, NE ;
Cahill, DG ;
Greene, JE .
PHYSICAL REVIEW B, 1996, 53 (12) :7876-7879