The role of contact resistance in GeTe and Ge2Sb2Te5 nanowire phase change memory reset switching current

被引：17

作者：

Hwang, Inchan ^{[1
,2
]}

Cho, Yong-Jun ^{[1
,2
]}

Lee, Myoung-Jae ^{[1
]}

Jo, Moon-Ho ^{[1
,2
,3
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Inst Basic Sci, Ctr Artificial Low Dimens Elect Syst, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Pohang 790784, South Korea

[3] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 19期

关键词：

SEMICONDUCTOR NANOWIRES;

D O I：

10.1063/1.4921226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanowire (NW) structures offer a model system for investigating material and scaling properties of phase change random access memory (PCRAM) at the nanometer scale. Here, we investigate the relationship between nanowire device contact resistance and reset current (I-reset) for varying diameters of NWs. Because the reset switching current directly affects possible device density of PCRAM NWs, it is considered one of the most important parameters for PCRAM. We found that the reset switching current, I-reset, was inversely proportional to the contact resistance of PCRAM NW devices decreasing as NW diameter was reduced from 250 nm to 20 nm. Our observations suggest that the reduction of power consumption of PCRAM in the sub-lithographic regime can be achieved by lowering the contact resistance. (C) 2015 AIP Publishing LLC.

引用

页数：5

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