A high performance graphene/few-layer InSe photo-detector

被引：145
作者：
Chen, Zhesheng [1 ,2 ]
Biscaras, Johan [1 ]
Shukla, Abhay [1 ]
机构：
[1] Univ Paris 06, Sorbonne Univ, IMPMC, UMR CNRS 7590,MNHN,IRD UMR 206, F-75005 Paris, France
[2] Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China
来源：
NANOSCALE | 2015年 / 7卷 / 14期
关键词：
PHOTODETECTORS; PHOTOTRANSISTORS; INDIUM;
D O I：
10.1039/c5nr00400d
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We fabricated a graphene/few-layer InSe heterostructure photodetector and solved a recurrent materials problem concerning degradation of ultra-thin atomic layers in air. This heterostructure has a largely enhanced performance explained by its fundamentally different mode of functioning with respect to the corresponding device without graphene.
引用
收藏
页码：5981 / 5986
页数：6
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