Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

被引：48

作者：

Robinson, JW

Rice, JH

Lee, KH

Na, JH

Taylor, RA

Hasko, DG

Oliver, RA

Kappers, MJ

Humphreys, CJ

Briggs, GAD

机构：

[1] Univ Oxford, Dept Phys, Oxford OX1 3PU, England

[2] Univ Cambridge, Ctr Microelect Res, Cambridge CB3 0HE, England

[3] Univ Cambridge, Dept Mat, Cambridge CB2 3QZ, England

[4] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 21期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1935044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of an externally applied lateral electric field upon an exciton confined in a single InGaN quantum dot is studied using microphotoluminescence spectroscopy. The quantum-confined Stark effect causes a shift in the exciton energy of more than 5 meV, accompanied by a reduction in the exciton oscillator strength. The shift has both linear and quadratic terms as a function of the applied field. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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