Surface preparation of 6H-SiC substrates by electron beam annealing

被引：1
|
作者：
Agueev, OA [1 ]
Avdeev, SP
Svetlichnyi, AM
Konakova, RV
Milenin, VV
Lytvyn, PM
Lytvyn, OS
Okhrimenko, OB
Soloviev, SI
Sudarshan, TS
机构：
[1] Taganrog State Univ Radio Engn, Taganrog 347928, Russia
[2] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
[3] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
6H-SiC substrates; surface morphology; electron beam annealing; Ti/6H-SiC contacts;
D O I：
10.4028/www.scientific.net/MSF.483-485.725
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An effect of electron beam annealing (EBA) on both surface morphology and characteristics of test Ti/n-6H-SiC contacts was investigated. It was found that the mean roughness of the n-6H-SiC surface decreased from 3.43 nm to 1.35 nm and the surface sheet resistance increased from 3.1 to 4.0 Omega/sq after EBA. The Ti/n-6H-SiC contacts formed on substrates after EBA exhibited ohmic properties, while the same contacts formed on the un-annealed samples were Schottky contacts with the barrier height of 0.63 eV and ideality factor of 1.92.
引用
收藏
页码：725 / 728
页数：4
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