COMPACT MODELING OF SILICON NANOWIRE MOSFET FOR RADIO FREQUENCY APPLICATIONS

被引：3
|
作者：
Cho, Seongjae [2 ,3 ]
Kim, Kyung Rok [4 ]
Park, Byung-Gook [2 ,3 ]
Kang, In Man [1 ]
机构：
[1] Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea
[2] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
[3] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
[4] Ulsan Natl Inst Sci & Technol, Sch Elect & Comp Engn, Ulsan 689798, South Korea
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2011年 / 53卷 / 02期
关键词：
silicon nanowire; MOSFET; radio frequency; model;
D O I：
10.1002/mop.25686
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article presents the radio frequency small-signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y-parameter analysis for the proposed equivalent circuit. Y-parameters of SNW MOSFET are obtained by three-dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y-parameter was calculated to he only 1.4%. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:471-473, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25686
引用
收藏
页码：471 / 473
页数：3
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