Formation of Si nanocrystals in multilayered nanoperiodic Al2O3/SiOx/Al2O3/SiOx/.../Si(100) structures: Synchrotron and photoluminescence data

被引：3
|
作者：
Turishchev, S. Yu. [1 ]
Terekhov, V. A. [1 ]
Koyuda, D. A. [1 ]
Spirin, D. E. [1 ]
Parinova, E. V. [1 ]
Nesterov, D. N. [1 ]
Grachev, D. A. [2 ]
Karabanova, I. A. [2 ]
Ershov, A. V. [2 ]
Mashin, A. I. [2 ]
Domashevskaya, E. P. [1 ]
机构：
[1] Voronezh State Univ, Voronezh 394006, Russia
[2] Lobachevsky State Univ Nizhni Novgorod, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
NEAR-EDGE STRUCTURE; SILICON NANOCRYSTALS; OPTICAL-PROPERTIES; EVAPORATION; EVOLUTION;
D O I：
10.1134/S1063782615030227
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of X-ray absorption near-edge structure spectroscopy data obtained with synchrotron radiation for multilayered nanoperiodic Al2O3/SiO (x) /Al2O3/SiO (x) /.../Si(100) structures annealed at temperatures of 500-1100A degrees C are reported. The data show that, upon high-temperature annealing (similar to 1100A degrees C), the structures are modified. The modification is attributed to the formation of Si nanocrystals in deep layers of the structures. At the same time, the structures exhibit size-dependent high-intensity photoluminescence in the photon-energy range 1.4-1.52 eV.
引用
收藏
页码：409 / 413
页数：5
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