The role of magnetic fields on the efficiency of OLED of double quantum well structures
被引:3
作者:
Jiang Wen-Long
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaJilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China
Jiang Wen-Long
[1
]
Meng Zhao-Hui
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaJilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China
Meng Zhao-Hui
[1
]
Cong Lin
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaJilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China
Cong Lin
[1
]
Wang Jin
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaJilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China
Wang Jin
[1
]
Wang Li-Zhong
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaJilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China
Wang Li-Zhong
[1
]
Han Qiang
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaJilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China
Han Qiang
[1
]
Meng Fan-Chao
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaJilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China
Meng Fan-Chao
[1
]
Gao Yong-Hui
论文数: 0引用数: 0
h-index: 0
机构:
Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaJilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China
Gao Yong-Hui
[1
]
机构:
[1] Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China
quantum well;
magnetic field;
OLED;
magnetic field effects;
MAGNETORESISTANCE;
D O I:
10.7498/aps.59.6642
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
The organic light emitting diodes with the structure of ITO/NPB (60 nm)/ Alq(3): Rubrene(1wt%,20 nm)/Alq(3) (3 nm)/Alq(3) :Rubrene(1 wt%,20 nm) / Alq(3)(20 nm)/LiF/Al, which have multiple quantum well structures (MQW), were fabricated and the magnetic field effects on the efficiency and current of the OLEDs were measured. The experiment showed that the current decreased monotoniocally, i. e. the resistance of the device increased under the magnetic field. At the same time, the magnetic field effect on efficiency was achieved. The changing ratio of efficiency increased 9. 13% maximally when the magnetic field was below 20 mT. The changing ratio of efficiency decreased with the magnetic field increasing when the magnetic field was higher than 20 mT.