Switching Trajectory Improvement of SiC MOSFET Devices Using a Feedback Gate Driver

被引：9
|
作者：
Paredes, Alejandro [1 ]
Fernandez, Efren [1 ]
Sala, Vicent [1 ]
Ghorbani, Hamidreza [1 ]
Romeral, Luis [1 ]
机构：
[1] Univ Politecn Cataluna, MCIA Res Ctr, Elect Engn Dept, Terrassa, Spain
来源：
2018 IEEE INTERNATIONAL CONFERENCE ON INDUSTRIAL TECHNOLOGY (ICIT) | 2018年
关键词：
Feedback gate driver; Oscillations; Power Losses; Silicon carbide MOSFET; DV/DT; DI/DT;
D O I：
10.1109/ICIT.2018.8352288
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, a feedback active gate driver (AGD) based on a multistage technique for improving the switching trajectory of silicon carbide (SiC) MOSFET devices is presented. The main purpose of this technique is to reduce the oscillations and overshoot in high-frequency with low switching losses. Besides, the gate driver is designed considering the current load variations with simple circuit structure. An AGD validation has been developed by using simulations. The results have shown the behaviour of the AGD and feasibility. Therefore, the AGD can reduce the oscillations to avoid electromagnetic interference (EMI) and also decrease the overshoots caused by high di/dt current and dv/dt voltage slopes. In addition, the tests showed that the proposed AGD can be developed with low switching losses in high-frequency applications and medium power.
引用
收藏
页码：847 / 852
页数：6
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