The density of states in silicon nanostructures determined by space-charge-limited current measurements

被引：17
作者：
Matsumoto, T
Mimura, H
Koshida, N
Masumoto, Y
机构：
[1] Japan Sci & Technol Corp, ERATO, Single Quantum Dot Project, Tsukuba, Ibaraki 3002635, Japan
[2] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 98077, Japan
[3] Tokyo Univ Agr & Technol, Dept Elect & Informat Engn, Koganei, Tokyo 184, Japan
[4] Univ Tsukuba, Inst Phys, Ibaraki 3058571, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 11期
关键词：
D O I：
10.1063/1.368930
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Space-charge-limited current (SCLC) flow was investigated as a function of applied potential and specimen thickness in nanocrystalline silicon films prepared by electrochemical anodization. From the analysis of the current-voltage (J-V) characteristics in the SCLC regime, the density of states distribution near the Fermi level was determined. The agreement between the experimental J-V characteristics and the theoretical curve strongly implies that the current flow is entirely controlled by localized states situated at the quasi-Fermi level. (C) 1998 American Institute of Physics. [S0021-8979(98)10823-X].
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页码：6157 / 6161
页数：5
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