Doping and annealing effects on ZnO:Cd thin films by sol-gel method

被引：96

作者：

Li, Gang ^{[1
]}

Zhu, Xuebin ^{[1
]}

Tang, Xianwu ^{[1
]}

Song, Wenhai ^{[1
]}

Yang, Zhaorong ^{[1
]}

Dai, Jianming ^{[1
]}

Sun, Yuping ^{[1
]}

Pan, Xu ^{[2
]}

Dai, Songyuan ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

[2] Chinese Acad Sci, Inst Plasma Phys, Key Lab New Thin Film Solar Cells, Hefei 230031, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 14期

关键词：

ZnO:Cd; Transparent conductive oxide; Sol gel; ZINC-OXIDE FILMS; OPTICAL-PROPERTIES; THICKNESS DEPENDENCE; TRANSPARENT; AL; TEMPERATURE; GROWTH; MICROSTRUCTURE; DEPOSITION;

D O I：

10.1016/j.jallcom.2011.01.176

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this article, ZnO:Cd films were successfully deposited on glass substrates by a sol-gel technique. The influence of doping concentration and annealing temperature effects was carefully investigated. All films exhibited c-axis preferential orientation and optical transparency with visible transmittance >80%. The minimum room temperature resistivity of 0.0341 Omega cm was obtained with 10 at.% Cd doping under 600 degrees C annealing temperature. The optical band gap of ZnO: Cd film was reduced as Cd doping concentration increased, while the band gap increased with the increase of annealing temperature. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：4816 / 4823

页数：8

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