Highly Secure Physically Unclonable Cryptographic Primitives Based on Interfacial Magnetic Anisotropy

被引:42
作者
Chen, Huiming [1 ]
Song, Min [2 ]
Guo, Zhe [1 ]
Li, Ruofan [1 ]
Zou, Qiming [3 ]
Luo, Shijiang [1 ]
Zhang, Shuai [1 ]
Luo, Qiang [1 ]
Hong, Jeongmin [1 ]
You, Long [1 ,4 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China
[2] Hubei Univ, Fac Phys & Elect Sci, Hubei Key Lab Ferro & Piezoelect Mat & Devices, Wuhan 430062, Hubei, Peoples R China
[3] Univ Nebraska, Dept Elect & Comp Engn, Lincoln, NE 68588 USA
[4] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
Physically unclonable function (PUF); interfacial magnetic anisotropy; information security; analogue PUF; DEPENDENCE; THICKNESS;
D O I
10.1021/acs.nanolett.8b03338
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Information security is of great importance for the approaching Internet of things (IoT) era. Physically unclonable functions (PUFs) have been intensively studied for information security. However, silicon PUFs are vulnerable to hazards such as modeling and side-channel attacks. Here we demonstrate a magnetic analogue PUF based on perpendicularly magnetized Ta/CoFeB/MgO heterostructures. The perpendicular magnetic anisotropy originates from the CoFeB/MgO interface, which is sensitive to the subnanometer variation of MgO thickness within a certain range (0.6-1.3 nm). When the MgO layer is thinned, a thickness variation resulting from ion milling nonuniformity induces unclonable random distributions of easy-axis magnetization orientations in heterostructures. The analogue PUF can provide a much larger key size than a conventional binary-bit counterpart. Moreover, after the thinning process, the unique easy-axis magnetization orientation in each single device was formed, which can avoid setting random states to realize low power consumption and high-density integration. This magnetic PUF is a promising innovative primitive for secret key generation and storage with high security in the IoT era.
引用
收藏
页码:7211 / 7216
页数:6
相关论文
共 31 条
[1]  
[Anonymous], 2014 IEEE INT EL DEV
[2]   Radiation-induced soft errors in advanced semiconductor technologies [J].
Baumann, RC .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (03) :305-316
[3]   Fingerprinting' documents and packaging [J].
Buchanan, JDR ;
Cowburn, RP ;
Jausovec, AV ;
Petit, D ;
Seem, P ;
Xiong, G ;
Atkinson, D ;
Fenton, K ;
Allwood, DA ;
Bryan, MT .
NATURE, 2005, 436 (7050) :475-475
[4]   Tunable spin configuration in [Co/Ni]-NiFe spring magnets [J].
Chung, Sunjae ;
Mohseni, S. M. ;
Fallahi, V. ;
Nguyen, T. N. Anh ;
Benatmane, N. ;
Dumas, R. K. ;
Akerman, Johan .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (12)
[5]   MRAM PUF: A Novel Geometry Based Magnetic PUF With Integrated CMOS [J].
Das, Jayita ;
Scott, Kevin ;
Rajaram, Srinath ;
Burgett, Drew ;
Bhanja, Sanjukta .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2015, 14 (03) :436-443
[6]   230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions [J].
Djayaprawira, DD ;
Tsunekawa, K ;
Nagai, M ;
Maehara, H ;
Yamagata, S ;
Watanabe, N ;
Yuasa, S ;
Suzuki, Y ;
Ando, K .
APPLIED PHYSICS LETTERS, 2005, 86 (09) :1-3
[7]  
Ganta D, 2011, 24 INT C VLSI DES IE, P135
[8]  
Getzlaff M., 2008, FUNDAMENTALS MAGNETI, P259
[9]   Dependence of giant tunnel magnetoresistance of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions on MgO barrier thickness and annealing temperature [J].
Hayakawa, J ;
Ikeda, S ;
Matsukura, F ;
Takahashi, H ;
Ohno, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19) :L587-L589
[10]   Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeB|MgO nanostructures [J].
Hayashi, Masamitsu ;
Yamanouchi, Michihiko ;
Fukami, Shunsuke ;
Sinha, Jaivardhan ;
Mitani, Seiji ;
Ohno, Hideo .
APPLIED PHYSICS LETTERS, 2012, 100 (19)