Bulk-like Si(001) atomic rearrangement artificially created at the Ge/Sb/Si(001) interface

被引：0
|
作者：
Perfetti, P
De Padova, P
Larciprete, R
Quaresima, C
Ottaviani, C
机构：
[1] CNR, ISM, I-00133 Rome, Italy
[2] ENEA, Dipartimento INN FIS, Rome, Italy
来源：
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1998年 / 20卷 / 7-8期
关键词：
D O I：
10.1007/BF03185509
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report here on the electronic properties of the Ge/Sb/Si(001) interface formation studied by very high-energy-resolution photoemission spectroscopy using synchrotson radiation. Surface- and bulk-sensitive measurements of the core levels of the different atomic species give a clear indication of the occurrence of a site exchange process between germanium and antimony, when Ge is deposited on the already prepared Sb/Si(001) interface. We demonstrate that the use of surfactant atoms like Sb at the strained Ge/Si(001) interface produces a perfect epitaxial interface, where the Si atoms are in register with the bulk geometrical positions.
引用
收藏
页码：1029 / 1037
页数：9
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