The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

被引：28

作者：

Fu, Yi-Keng ^{[1
]}

Jiang, Ren-Hao ^{[1
,2
]}

Lu, Yu-Hsuan ^{[1
,3
]}

Chen, Bo-Chun ^{[1
]}

Xuan, Rong ^{[1
,4
]}

Fang, Yen-Hsiang ^{[1
]}

Lin, Chia-Feng ^{[2
]}

Su, Yan-Kuin ^{[3
]}

Chen, Jenn-Fang ^{[4
]}

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan

[2] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan

[3] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[4] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 12期

关键词：

QUANTUM-WELLS;

D O I：

10.1063/1.3571440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The letter reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barrier (QB). The indium mole fraction of AlInGaN QB could be enhanced as we increased the trimethylgallium flow rate. It was found the AlInGaN/InGaN LEDs can reduce forward voltage and improve light output power, compared with conventional GaN QB. By using advanced device simulation, it should be attributed to a reduction in lattice mismatch induced polarization mismatch in the active layer, which results in the suppression of electron overflow. (C) 2011 American Institute of Physics. [doi:10.1063/1.3571440]

引用

页数：3

共 11 条

[1]

GOTO O, 2007, P SPIE, V6485

[2] Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition [J].

Keller, S ;

Keller, BP ;

Kapolnek, D ;

Mishra, UK ;

DenBaars, SP ;

Shmagin, IK ;

Kolbas, RM ;

Krishnankutty, S .

JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :349-352

[3] Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells [J].

Keller, S ;

Chichibu, SF ;

Minsky, MS ;

Hu, E ;

Mishra, UK ;

DenBaars, SP .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :258-264

[4]

KNAUER A, 2007, P SPIE, V6797

[5] Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers [J].

Kuo, Yen-Kuang ;

Chang, Jih-Yuan ;

Tsai, Miao-Chan ;

Yen, Sheng-Horng .

APPLIED PHYSICS LETTERS, 2009, 95 (01)

[6] Violet electroluminescence of AlInGaN-InGaN multiquantum-well light-emitting diodes: Quantum-confined stark effect and heating effect [J].

Li, Jun ;

Shi, S. L. ;

Wang, Y. J. ;

Xu, S. J. ;

Zhao, D. G. ;

Zhu, J. J. ;

Yang, H. ;

Lu, F. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (9-12) :789-791

[7] Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows [J].

Liu, JP ;

Zhang, BS ;

Wu, M ;

Li, DB ;

Zhang, JC ;

Jin, RQ ;

Zhu, JJ ;

Chen, J ;

Wang, JF ;

Wang, YT ;

Yang, H .

JOURNAL OF CRYSTAL GROWTH, 2004, 260 (3-4) :388-393

[8] Recent progress of nitride-based light emitting devices [J].

Mukai, T ;

Nagahama, S ;

Sano, M ;

Yanamoto, T ;

Morita, D ;

Mitani, T ;

Narukawa, Y ;

Yamamoto, S ;

Niki, I ;

Yamada, M ;

Sonobe, S ;

Shioji, S ;

Deguchi, K ;

Naitou, T ;

Tamaki, H ;

Murazaki, Y ;

Kameshima, M .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 200 (01) :52-57

[9] Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip [J].

Narukawa, Y ;

Niki, I ;

Izuno, K ;

Yamada, M ;

Murazaki, Y ;

Mukai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4A) :L371-L373

[10] InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode [J].

Yamada, M ;

Mitani, T ;

Narukawa, Y ;

Shioji, S ;

Niki, I ;

Sonobe, S ;

Deguchi, K ;

Sano, M ;

Mukai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (12B) :L1431-L1433

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