SWITCHING LOSSES ANALYSIS IN SIC POWER MOSFET

被引：0
|
作者：
Lirio, L. E. A. [1 ]
Bellar, M. D. [2 ]
Neto, J. A. M. [3 ]
dos Reis, M. S. [3 ]
Aredes, M. [4 ]
机构：
[1] DSAM Brazilian Navy, Rio De Janeiro, RJ, Brazil
[2] PEL DETEL State Univ Rio de Janeiro, Rio De Janeiro, RJ, Brazil
[3] CEELE CEFET RJ Fed Ctr Tech Educ Rio de Janeiro, Rio De Janeiro, RJ, Brazil
[4] PEE COPPE Fed Univ Rio de Janeiro, Rio De Janeiro, RJ, Brazil
来源：
2015 IEEE 13TH BRAZILIAN POWER ELECTRONICS CONFERENCE AND 1ST SOUTHERN POWER ELECTRONICS CONFERENCE (COBEP/SPEC) | 2015年
关键词：
SiC MOSFET; Switching Power Losses;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper methodologies for analysis of power switching losses in SiC MOSFETs are evaluated by means of PSpice simulations. Besides, an optimized piecewise linear method to calculate those losses is proposed. Results and discussions are presented as an aid for assessing the performance of power electronics converters based on SiC MOSFETs.
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页数：6
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