Polymer-assisted deposition and room-temperature ferromagnetism of amorphous Mn-doped gallium oxide films

被引：5
作者：
Dai, Xu [1 ]
Zhang, Xi [1 ]
Xiang, Gang [1 ]
机构：
[1] Sichuan Univ, Coll Phys, Chengdu 610000, Peoples R China
来源：
SCRIPTA MATERIALIA | 2022年 / 220卷
基金：
中国国家自然科学基金;
关键词：
Amorphous gallium oxide; Magnetic semiconductor; Polymer-assisted deposition; Oxygen vacancies; Ferromagnetism; BETA-GA2O3;
D O I：
10.1016/j.scriptamat.2022.114919
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, amorphous Mn-doped gallium oxide (a-GMO) films are prepared by polymer-assisted deposition. The a-GMO films exhibit room-temperature ferromagnetism (RTFM) and their saturation magnetization (M-S) and coercive field (H-C) values are dependent on the Mn concentration. Interestingly, a lower Mn-doping concentration (3.1%) is sufficient to trigger the RTFM in the a-GMO films, in comparison with the previously-reported values in crystalline Mn-doped beta-Ga2O3 (11%) and gamma-Ga2O3 (7.0%). Furthermore, the a-GMO films exhibit higher M-S values than those crystalline Mn-doped Ga2O3 films at the medium doping levels between 10% and 20%. Further analysis shows that the enhancement of the ferromagnetism comes from the strong coupling between abundant oxygen vacancies (V(O)s) and Mn ions in the a-GMO films. Our results give insight to the RTFM of the a- GMO films and may be useful for the design, fabrication and application of spintronic materials based on gallium oxide.
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页数：5
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