Double Pulse Doped InGaAs/AlGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistor Heterostructures

被引：5

作者：

Egorov, A. Yu. ^{[1
]}

Gladyshev, A. G. ^{[1
]}

Nikitina, E. V. ^{[1
]}

Denisov, D. V. ^{[1
]}

Polyakov, N. K. ^{[1
]}

Pirogov, E. V. ^{[1
]}

Gorbazevich, A. A. ^{[1
]}

机构：

[1] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 07期

关键词：

GaAs; Molecular Beam Epitaxy; Sheet Resistance; Double Pulse; High Electron Mobility Transistor;

D O I：

10.1134/S1063782610070158

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Double pulse doped (delta-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm(2)/(V s) at sheet electron densities of 3.00 x 10(12) and 3.36 x 10(12) cm(-2), respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

引用

页码：919 / 923

页数：5

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