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Impeded thermal transport in composition graded SiGe nanowires
被引:23
作者:

Zhang, Honggang
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Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Minist Educ China, Chengdu 610031, Sichuan, Peoples R China Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Minist Educ China, Chengdu 610031, Sichuan, Peoples R China

Han, Haoxue
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机构:
St Gobain Res, Dept Thermomech & Modelling, 39 Quai Lucien Lefranc, F-93303 Aubervilliers, France Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Minist Educ China, Chengdu 610031, Sichuan, Peoples R China

Xiong, Shiyun
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机构:
Soochow Univ, Funct Nano & Soft Mat Lab FUNSOM, Suzhou 215123, Peoples R China
Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Peoples R China Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Minist Educ China, Chengdu 610031, Sichuan, Peoples R China

Wang, Hongyan
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Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Minist Educ China, Chengdu 610031, Sichuan, Peoples R China Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Minist Educ China, Chengdu 610031, Sichuan, Peoples R China

Volz, Sebastian
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h-index: 0
机构:
Univ Paris Saclay, Lab EM2C, CNRS, Cent Supelec, F-92295 Chatenay Malabry, France
Univ Tokyo, LIMMS CNRS IIS UMI2820, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Minist Educ China, Chengdu 610031, Sichuan, Peoples R China

Ni, Yuxiang
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Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Minist Educ China, Chengdu 610031, Sichuan, Peoples R China Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Minist Educ China, Chengdu 610031, Sichuan, Peoples R China
机构:
[1] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Adv Technol Mat, Minist Educ China, Chengdu 610031, Sichuan, Peoples R China
[2] St Gobain Res, Dept Thermomech & Modelling, 39 Quai Lucien Lefranc, F-93303 Aubervilliers, France
[3] Soochow Univ, Funct Nano & Soft Mat Lab FUNSOM, Suzhou 215123, Peoples R China
[4] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Peoples R China
[5] Univ Paris Saclay, Lab EM2C, CNRS, Cent Supelec, F-92295 Chatenay Malabry, France
[6] Univ Tokyo, LIMMS CNRS IIS UMI2820, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
关键词:
ALLOY NANOWIRES;
CONDUCTIVITY;
CRYSTAL;
SILICON;
D O I:
10.1063/1.4998998
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Composition graded nanowires (NWs) have attracted increasing research interest in the application of optoelectronic devices, due to their graded bandgaps caused by the changing composition. However, the thermal transport property of composition graded NWs is not clear, which is critical for their potential applications in electronics and thermoelectrics. In this Letter taking SiGe NW as an example, we explore the thermal transport property of composition graded NWs. Molecular dynamics simulations reveal that the thermal conductivities (kappa) of the composition graded SiGe NWs can be reduced up to 57% compared with that of the corresponding SiGe NW with abrupt interfaces. The j reduction stems from the shortening of phonon mean free paths due to the inhomogeneous composition distributions. The phonon wave packet propagation analysis reveals that the composition gradient can reflect more than 70% of the wave packet energy, and phonon localization is observed in the composition graded region. Our findings suggest a promising prospect of composition graded NWs in the use of thermoelectrics and high temperature coatings, where low thermal conductivity is expected.
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