Molecular dynamics simulation of octadecaborane implantation into silicon

被引：0

作者：

Marques, Luis A. ^{[1
]}

Pelaz, Lourdes ^{[1
]}

Santos, Iva ^{[1
]}

Lopez, Pedro ^{[1
]}

Aboy, Maria ^{[1
]}

Venezia, Vincent C. ^{[2
]}

机构：

[1] Univ Valladolid, Dept Elect & Elect, ETSI Telecomunicac, Campus Miguel Delibes SN, E-47011 Valladolid, Spain

[2] Axcelis Technol, Beverly, MA 01915 USA

来源：

2007 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS | 2007年

关键词：

electronics; tecnology; silicon; simulation; molecular dynamics;

D O I：

10.1109/SCED.2007.383992

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si in order to make a comparative study and determine the advantages and drawbacks of each approach when used to fabricate shallow junctions. We have simulated a total of 1000 cascades of monatomic boron and an equivalent of 56 cascades of octadecaborane in order to have good statistics. We have obtained and analyzed the doping profiles and the amount and morphology of the damage produced within the target. Our simulation results indicate that the use of octadecaborane clusters for the implantation process shows several advantages with respect to monatomic B beams, mainly related to the reduction of channeling and the lower amount of residual damage at the end of range.

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页码：44 / +

页数：2

相关论文

共 16 条

[1] Atomistic analysis of defect evolution and transient enhanced diffusion in silicon [J].

Aboy, M ;

Pelaz, L ;

Marqués, LA ;

Enriquez, L ;

Barbolla, J .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) :1013-1018

[2] Defect characteristics by boron cluster ion implantation [J].

Aoki, T ;

Matsuo, J ;

Takaoka, G ;

Toyoda, N ;

Yamada, I .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 :855-860

[3] Ion-beam processing of silicon at keV energies: A molecular-dynamics study [J].

Caturla, MJ ;

delaRubia, TD ;

Marques, LA ;

Gilmer, GH .

PHYSICAL REVIEW B, 1996, 54 (23) :16683-16695

[4] Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths [J].

Chong, YF ;

Pey, KL ;

Wee, ATS ;

See, A ;

Chan, L ;

Lu, YF ;

Song, WD ;

Chua, LH .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3197-3199

[5]

Gear C. W., 1971, NUMERICAL INITIAL VA

[6] Characteristics of sub-keV atom-Si(111) surface collisions [J].

Hedström, M ;

Cheng, HP .

PHYSICAL REVIEW B, 1999, 59 (16) :10701-10706

[7] Ultra-high resolution mass spectroscopy of boron cluster ions [J].

Jacobson, D ;

Horsky, T ;

Krull, W ;

Milgate, B .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 237 (1-2) :406-410

[8] Ultra-shallow junction formation by B18H22 ion implantation [J].

Kawasaki, Y ;

Kuroi, T ;

Yamashita, T ;

Horita, K ;

Hayashi, T ;

Ishibashi, M ;

Togawa, M ;

Ohno, Y ;

Yoneda, M ;

Horsky, T ;

Jacobson, D ;

Krull, W .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 237 (1-2) :25-29

[9] AN IMPROVED MOLECULAR-DYNAMICS SCHEME FOR ION-BOMBARDMENT SIMULATIONS [J].

MARQUES, LA ;

RUBIO, JE ;

JARAI, M ;

ENRIQUEZ, L ;

BARBOLLA, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 102 (1-4) :7-11

[10] Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial -: art. no. 085204 [J].

Marqués, LA ;

Pelaz, L ;

Castrillo, P ;

Barbolla, J .

PHYSICAL REVIEW B, 2005, 71 (08)